Most of the IGBT available in the market having the buffer layer in them. IGBT having the buffer layer in them are called Asymmetric IGBT(Punch-trough IGBT). Because of the presence of the n+ buffer layer in the IGBT, it unable to block the large reverse voltage, therefore the device breakdown at the lower reverse voltage.
This offers the IGBT the fast switching time, as compare the symmetric configuration.

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